Auflistung nach Schlagwort "Recombination centres"

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  • Lifetime degradation mechanism in boron-doped Czochralski silicon 
    Voronkov, Vladimir V.; Falster, Robert; Batunina, A.V.; MacDonald, D.; Bothe, Karsten; Schmidt, J. (London : Elsevier Ltd., 2011)
    The recombination centre that emerges in boron- and oxygen-containing silicon was thought to be a complex of a substitutional boron atom Bs and an oxygen dimer O2. However in material co-doped with boron and phosphorus, ...
  • Minority carrier lifetime in silicon photovoltaics: The effect of oxygen precipitation 
    Murphy, J.D.; McGuire, R.E.; Bothe, K.; Voronkov, V.V.; Falster, R.J. (London : Elsevier Ltd., 2014)
    Single-crystal Czochralski silicon used for photovoltaics is typically supersaturated with interstitial oxygen at temperatures just below the melting point. Oxide precipitates therefore can form during ingot cooling and ...